Vol. 16, no.2, 2024
РусскийEnglish
RADIOELECTRONICS
Modeling and analysis of temperature and thermomechanical stress distributions in a multi-chip electronic module
Alexander M. Khodakov, Viacheslav A. Sergeev, Andrey A. Gavrikov
Kotelnikov Institute of Radioengineering and Electronics of RAS, Ulyanovsk Branch, http://www.ulireran.ru/
Ulyanovsk 432071, Russian Federation
E-mail: ln23al@yandex.ru, sva@ulstu.ru, a.gavrikoff@gmail.com
Vitaliy I. Smirnov
Ulyanovsk State Technical University, https://www.ulstu.ru/
Ulyanovsk 432027, Russian Federation
E-mail: smirnov-vi@mail.ru
Ruslan G. Tarasov
AO "NPP Zavod Iskra", https://www.zavod-iskra.ru/
Ulyanovsk 432030, Russian Federation
E-mail: rgtarasov@mail.ru
Received February 27, 2024, peer-reviewed March 01, 2024, accepted March 06, 2024, published April 25, 2024
Abstract: A mathematical thermomechanical model of a multi-chip electronic module (MEM) containing three silicon dies of high-power transistors fixed with a conductive adhesive on a copper plate placed on a radiator is considered in the form of a system of equations of thermal conductivity and thermoelasticity with specified boundary conditions. As a result of computational studies of the model in the COMSOL Multiphysics software environment, distributions of temperature and thermomechanical stresses in the MEM structural elements were obtained depending on the heating power, the thickness of the adhesive and the size of the model defect in the contact connection of one of the MEM crystals with a copper plate in the form of voids in the adhesive layer. It is shown that voids in the adhesive layer lead to a sharply non-uniform temperature distribution over the crystal area and thermomechanical shear stresses in the contact layer that exceed the maximum permissible values for the adhesive. It has been established that thermomechanical stresses decrease with increasing thickness of the adhesive layer and increase with increasing size of the defect(voids) in this layer. The simulation results are in good agreement with the results of measuring the thermal impedance of power transistor crystals using the modulation method, which indicates the correctness and adequacy of the developed model.
Keywords: multi-chip electronic module, thermomechanical model, contact connection, defect, temperature distribution, thermomechanical stress, thermal resistance, modulation method
UDC 621.382.32
RENSIT, 2024, 16(2):215-222e DOI: 10.17725/j.rensit.2024.16.215
Full-text electronic version of this article - web site http://en.rensit.ru/vypuski/article/552/16(2)215-222e.pdf