Vol. 13, no.4, 2021



Nikolae V. Masalsky

Research Institute of System Researches of RAS, http://www.niisi.ru/
Moscow 117218, Russian Federation
E-mail: volkov@niisi.ras.ru

Received August 12, 2021, peer-reviewed August 22, 2021, accepted August 31, 2021

Abstract: The applicability of the architecture of a nanoscale surrounding gate field-effect transistor with a combined cylindrical working area for low-voltage applications is discussed. At the same time, the licensed TCAD Sentaurus instrument and technological modeling system is used as a tool. The transistor architecture under consideration involves combining the working zones of n-channel and p-channel transistors with one common gate. At the same time, the efficiency of suppressing short-channel effects is maintained and a high level of transistor current is provided in the strong inversion mode. Based on this architecture, a TCAD model of the NAND gate has been developed, the design of which contains two independent surrounding gates one combined working area. The use of the proposed gate architecture makes it possible to reduce the number of required transistor structures per gate by three times. This leads to a decrease in the switched capacity and power dissipation. From the simulation results, the gate geometric parameters with a working area length of 25 nm and a diameter of 8.5 nm, which can function at control voltages of 0.5 V in the frequency range up to 20 GHz with high gain, are determined. The switching time delay is 0.81 ps. The TCAD model of a half-adder is developed in the basis 2NAND. According to the simulation results, the efficiency of the prototype, which performs binary code addition operations with a delay of 4.2 ps at a supply voltage of 0.5 V and a frequency of 20 GHz, is shown. The obtained results create a theoretical basis for the synthesis of low-voltage complex functional blocks with high performance and minimal occupied area, which meets modern requirements for digital applications.

Keywords: nanoscale MOSFET, silicon on insulator, surrounding gate, short-channel effects, logic gate, low supply voltage

UDC 621.382.323

RENSIT, 2021, 13(4):449-456 DOI: 10.17725/rensit.2021.13.449.

Full-text electronic version of this article - web site http://en.rensit.ru/vypuski/article/413/13(4)449-456pdf