Vol. 6, №1, 2014
РусскийEnglish

NANOSYSTEMS


METHODS OF CREATION AND STUDY OF THE MONOMOLECULAR TRANSISTORS
Soldatov E.S., Sapkov I.V., Stepanov A.S.
Lomonosov Moscow State University, Faculty of Physics, http://www.phys.msu.ru
1/2, Leninskie Gory, 119991 Moscow, Russian Federation
esold@phys.msu.ru

Received 01.12.2011
The progress in the field of the element base of contemporary electronics gives a production of the microcircuit elements of to the sizes in the units of nanometers. It assumes a change in quite physical principles of the work of microelectronic devices in connection with the significance of quantum effects appearing on such sizes. The development of electronics led to the appearance of hybrid devices with the layer of molecular components on the base of silicon technology CMOS - complementary metal oxide semiconductor. Quantum point/nano-particle between the conducting electrodes, i.e. monomolecular single-electron transistor is a basic component (working element) here. The creation of transistor on the base of single molecule shares into two stages - creation of the conducting electrodes with the gap of the order of the units of nanometers and incorporation of molecule into this gap. In the present work the survey of the possible methods of the solution of this problem is proposed. Three groups of the methods of creating the electrodes for the molecular transistor are examined. In the first group are noted the methods with the possibility of the inspection of the width of gap: the laboratory methods of using the needle of the scanning tunnel microscope as one of the electrodes and the method of the controlled mechanical deformation of the base layer of the lithographically made nano-wire before breaking of electrodes with the formation of nano-gap. In the second group - methods of the local destruction of nano-wire due to either electromigration under the action of the current of high density, or the etching (electrochemical, by ion beam, ablation) of the nano-wires, created with electron-beam lithography or evaporation including shadow evaporation. The third group consist of the methods of reducing of the existing gaps to the nano-sizes by electrochemical precipitation, or by additional evaporation. Finally, the methods of the immobilization of single nano-objects into the nano-gap are discussed: from the uncontrollable simple precipitation of molecules from the solution with the subsequent desiccation to electrotrapping of single molecules and chemical self-assembly of nano-particles in the gap with the control of the voltage-current characteristic of contact.

Keywords: nano-electronics, monomolecular single-electron transistor, electrodes with the nano-gap, single nano-particles, lithography, electrochemistry.

UDC 621.382; 535.312

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RENSIT, 2011, 3(2)38-58.
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