Vol. 17, no. 4, 2025
РусскийEnglish
NANOSYSTEMS
Epitaxial Growth, Structure and Electronic Transport of SrIrO3 Thin Films
Nikita V. Dubitskiy, Victoria A. Baydikova, Gennady A. Ovsyannikov, Ivan E. Moskal, Andrey M. Petrzhik, Anton V. Shadrin
Kotelnikov Institute of Radioengineering and Electronics of RAS, http://cplire.ru/
Moscow 125009, Russian Federation
Email: nikita.dubitskiy@gmail.com, baydikova2001@mail.ru, gena@hitech.cplire.ru, moskal@hitech.cplire.ru, petrzhik@hitech.cplire.ru, shadrinant@mail.ru
Received April 23, 2025, peer-reviewed May 03, 2025, accepted May 06, 2025, published August 14, 2025
Abstract: A methodology for fabricating epitaxial strontium iridate (SrIrO3) thin films via radio-frequency magnetron sputtering has been developed on single-crystal substrates of (110)NdGaO3, (001)SrTiO3, and (001)(LaAlO3)0.3(Sr2TaAlO6)0.7 (LSAT). X-ray diffraction techniques were employed to investigate the structural characteristics and the influence of strain in thin films induced by lattice parameter mismatch between the film and substrate. Temperature-dependent resistance analysis revealed the effect of magnetic impurity scattering, attributed to oxygen vacancies, on the electronic transport properties of the films. X-ray photoelectron spectroscopy measurements determined the spin-orbit splitting energy for the Ir 4f core level, which varies from 2.99 eV for films on (001)NdGaO3 to 3.03 eV for films on (001)SrTiO3, correlating with oxygen vacancy concentration, structural perfection, and stoichiometry.
Keywords: SrIrO3 thin films, electronic transport, mechanical stress, stress relaxation, epitaxial growth
PACS 73.50. −h, 73.61. −r, 68.55. −Ln
RENSIT, 2025, 17(4):439-448e DOI: 10.17725/j.rensit.2025.17.439
Full-text electronic version of this article - web site http://en.rensit.ru/vypuski/article/689/17(4)439-448e.pdf