Vol. 17, no. 1, 2025
РусскийEnglish
NANOSYSTEMS
Interdigitated structures based on ferroelectric films
Mikhail S. Afanasyev, Dmitry A. Belorusov, Dmitry A. Kiselev, Galina V. Chucheva
Kotel'nikov Institute of Radioengineering and Electronics of RAS, Fryazino branch, https://fireras.su/
Fryazino 141190, Moscow region, Russian Federation
Email: michaela2005@yandex.ru, belorusov.dima@mail.ru, dm.kiselev@gmail.com, gvc@ms.ire.rssi.ru
Andrey V. Smirnov
Kotel'nikov Institute of Radioengineering and Electronics of RAS, http://www.cplire.ru/
Moscow 125009, Russian Federation
Email: andre-smirnov-v@yandex.ru
Received November 26, 2024, reviewed December 02, 2024, accepted December 09, 2024, published February 09, 2025
Abstract: Ferroelectric films of Ba0.8Sr0.2TiO3 composition were synthesized on silicon substrates by RF sputtering. Interdigital structures were formed on the grown films by magnetron sputtering and projection maskless photolithography. High-frequency measurements of impedance dependences of formed objects on voltage were carried out. Results of studies of electrophysical properties of obtained structures are presented.
Keywords: interdigital structures, planar capacitors, ferroelectric BST films, inverse photolithography, X-ray structural studies, electrophysical properties
UDC 53.097
RENSIT, 2025, 17(1):119-124e DOI: 10.17725/j.rensit.2025.17.119
Full-text electronic version of this article - web site http://en.rensit.ru/vypuski/article/644/17(1)119-124e.pdf