Vol. 16, no. 6, 2024
РусскийEnglish
CONDENSED MATTER PHYSICS
Using Topological Insulators Properties to Improve Electronic and Spintronic Devices
Firas Mahmood Mustafa
Alnoor University, https://alnoor.edu.iq/
Nineveh 41012, Iraq
E-mail: firas.mahmood@alnoor.edu.iq
Salah Yehia Hussain
Al Mansour University College, https://muc.edu.iq/
Baghdad 10067, Iraq
E-mail: hussain@muc.edu.iq
Saadi Mohamed Dhahir Nuzal
Al Hikma University College, https://hiuc.edu.iq/
Baghdad 10015, Iraq
E-mail: saadidhaher@yahoo.com
Salam Hussein Yahya
Cihan University Sulaimaniya, https://sulicihan.edu.krd/
Sulaymaniyah City 46001, Kurdistan, Iraq
E-mail: salam.yahya@sulicihan.edu.krd
Noorhan Waleed Abdulah
Al-Turath University, https://uoturath.edu.iq/
Baghdad 10013, Iraq
E-mail: noorhan.waleed@turath.edu.iq
Received May 22, 2024, peer-reviewed May 27, 2024, accepted May 31, 2024, published September 17, 2024.
Abstract: Background: Topological insulators (TIs) are materials with distinctive features, including insulating interiors and conducting surface states protected by time-reversal symmetry. These features make TIs extremely promising for electrical and spintronic device applications, where manipulating electron spin without charge transfer is advantageous. Objective: This study aims to investigate of TIs to improve the performance and efficiency of electrical and spintronic devices. We look at the special qualities of TIs that may be used to improve device functionality, such as reduced power consumption and higher operational speed. Methods: To investigate electron transport behaviour on the surfaces of different TIs, we used a mix of quantum mechanical models and experimental settings. Devices based on bismuth telluride (Bi2Te3) and thallium arsenide (TlAs) were built to test their performance in real-world applications. Results: TI devices showed considerable gains in spin transport efficiency and thermal stability compared to conventional materials. Spintronic devices based on TIs demonstrated a 50% reduction in energy usage and a 30% improvement in data processing speed. Conclusion: Including topological insulators in electrical and spintronic devices offers a promising path to more efficient and speedier technologies. Future research should concentrate on the scalable integration of TIs into commercial devices and the discovery of novel materials with topological insulating characteristic.
Keywords: topological insulators, spintronics, electronic devices, quantum mechanics, energy efficiency, bismuth telluride, thallium arsenide, surface states, time-reversal symmetry, device integration
UDC 544.344.016:546.2
RENSIT, 2024, 16(5):721-730e DOI: 10.17725/j.rensit.2024.16.721
Full-text electronic version of this article - web site http://en.rensit.ru/vypuski/article/604/16(6)721-730e.pdf