Vol. 16, no.1, 2024
РусскийEnglish
NANOSYSTEMS
MORPHOLOGY AND ELECTRICAL PROPERTIES OF MODIFIED LANGMUIR GRAPHENE OXIDE FILMS
Iliya A. Gorbachev, Vladimir V. Kolesov
Kotel'nikov Institute of Radioengineering and Electronics of RAS, http://www.cplire.ru/
Moscow 125009, Russian Federationn
E-mail: iliyagor36@gmail.com, kvv@cplire.ru
Received December 01, 2023, peer-reviewed December 12, 2023, accepted December 13, 2023, published March 15, 2024.
Abstract: The work devoted to study of the electrical properties and morphology of Langmuir-Blodgett films of modified graphene oxide (GO). The Langmuir-Blodgett method was used for studying of formation process of Langmuir monolayers formed on the subphase contained dissolved ions of tin chloride salt. The compression isotherms of monolayers formed in the presence of tin ions shifted towards larger occupied areas. Langmuir monolayers of graphene oxide formed under various conditions were transferred on solid substrates and studied by atomic force microscopy and voltammetry. It has been established that the presence of tin ions in the aqueous subphase leads to changes in the morphology of the formed films. Thus, the average roughness and surface area of such films increased from 0.2 nm and 0.04 μm2 to 5.4 nm and 0.46 μm2, respectively. The presence of tin ions dissolved in the aqueous subphase influenced the type of current-voltage characteristics of the films under study. The maximum reverse current increases from 075 nA to -0.3 nA and the resistance increases from 11 GOhm to 700 GOhm. Temperature annealing of the graphene oxide film at 300°C leads to a decrease in the maximum forward current and an increase in the reverse current from 0.0407 nA and -0.071 nA to 0.0065 nA and 0.0616 nA, respectively. For a film formed in the presence of ions in the subphase, annealing does not affect the maximum forward current, and the current of the reverse branch of the current-voltage characteristic increases from -0.1669 nA to 0.0468 nA.
Keywords: graphene oxide thin films, Langmuir graphene oxide monolayers, thin films conductivity, graphene oxide hybrid coatings
UGC 539.23, 544.032.7
RENSIT, 2024, 16(1):121-128e DOI: 10.17725/j.rensit.2024.16.121
Full-text electronic version of this article - web site http://en.rensit.ru/vypuski/article/536/16(1)121-128e.pdf