Vol. 15, no.2, 2023
РусскийEnglish
RADIOELECTRONICS
Modeling of thermoelectrical processes in a power MOSFET modules
1,2Vitaliy I. Smirnov, 1Alexander M. Hodakov, 1Andrey A. Gavrikov
1Kotelnikov Institute of Radioengineering and Electronics of RAS, Ulyanovsk Branch, http://www.ulireran.ru/
Ulyanovsk 432071, Russian Federation
2Ulyanovsk State Technical University, https://www.ulstu.ru/
Ulyanovsk 432027, Russian Federation
E-mail: smirnov-vi@mail.ru, hod22am@mail.ru, a.gavrikoff@gmail.com
Received April 25, 2023, peer-reviewed May 03, 2023, accepted May 10, 2023
Abstract: The paper represents thermal model of power MOSFET module based on a transistors mounted on copper-ceramic DBC (Direct Bond Copper) plate. The analysis of thermal processes in the module caused by pulse heating of particular transistors was performed by the finite elements method using COMSOL Multiphysics. The model performs estimation of the temperature field on the DBC plate and transistors overheat temperature. The modeling results was compared to the experiment – thermal impedance matrix measured by the modulation method using the heating power modulated by the harmonic law. Analysis of the data obtained allows to conclude that the calculated and experimental values of the dies overheating temperature are in good agreement with each other and confirms the correctness of the developed thermal power module model.
Keywords: power module, MOSFET, thermal model, temperature filed, thermal resistance
UDC 621.382.32
RENSIT, 2023, 15(2):117-124e DOI: 10.17725/rensit.2023.15.117
Full-text electronic version of this article - web site http://en.rensit.ru/vypuski/article/493/15(2)117-124e.pdf