Vol. 13, no.4, 2021
РусскийEnglish
RADIOELECTRONICS
INVESTIGATION OF THIN FILMS FOR FABRICATION OF Nb/AlN/NbN TUNNEL JUNCTIONS AND MICROSTRIP LINES OF NbTiN-SiO2-Al
Artem M. Chekushkin, Lyudmila V. Filippenko, Vadim V. Kashin, Mikhail Yu. Fominskiy, Valery P. Koshelets
Kotelnikov Institute of Radioengineering and Electronics of RAS, http://www. cplire.ru/
Moscow 125009, Russian Federation
E-mail: chekushkin@hitech.cplire.ru, lyudmila@hitech.cplire.ru, vvkashin@cplire.ru, demiurge@hitech.cplire.ru, valery@hitech.cplire.ru
Received November 03, 2021, peer-reviewed November 10, 2021, accepted November 17, 2021
Abstract: The surface of thin films of Nb, Al, NbTiN, SiO2, Al2O3 is investigated in this work. These films are necessary for the fabrication of high-sensitive devices of THz range. The fabrication processes of such devices are described briefly. All films were fabricated using a Kurt J. Lesker magnetron sputtering system. The study of the film surface roughness was carried out using a Bruker Ikon atomic force microscope. The surface quality of films is determined not only deposition mode, but plasma etching process also. The best values of the root-mean-square deviation of the surface profile Rq = 2 nm were obtained for the used NbTiN film with a thickness of 325 nm. Thin Al-layers that is used for tunnel barrier formation is studied. It is shown than Al films with a thickness of more than 6 nm are already continuous. The surface roughness of the single-layer and multilayer films has been studied.
Keywords: superconductivity, tunnel junctions, magnetron sputtering, thin films, surface roughness
UDC 539.231
RENSIT, 2021, 13(4):419-426 DOI: 10.17725/rensit.2021.13.419.
Full-text electronic version of this article - web site http://en.rensit.ru/vypuski/article/413/13(4)419-426pdf