Vol. 12, no.3, 2020
РусскийEnglish
NANOSYSTEMS
Mn SEGREGATION ON DEFECTS OF A GaSb CRYSTALL LATTICE
Vladimir P. Sanygin, Olga N. Pashkova, Alexander D. Izotov
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, http://igic.ras.ru/
Moscow 119991, Russian Federation
E-mail: sanygin@igic.ras.ru, olg-pashkova@yandex.ru, izotov@igic.ras.ru
Received Juni 08, 2020; peer reviewed Juni 22, 2020; accepted Juni 30, 2020
Abstract. When doping gallium antimonide with 2 at.% Mn, it was found that, as a result of quenching of the melt, manganese segregates on grain-forming dislocations of the crystalline GaSb (111) texture in the form of microinclusions based on the ferromagnetic compound MnSb. Manganese atoms segregate on GaSb dislocations discretely with periodic spacing of inclusions from each other. The dimensions of the inclusions are of the order of 1 μm, they differ in composition and magnetic properties, but on average their composition and properties correspond to the ferromagnetic phase Mn1,1Sb. At T = 4 K, the crystalline anisotropy of GaSb
Keywords: magnetic semiconductors, crystal lattice defects, dislocations
PACS: 61.46+w; 61.72-y
RENSIT, 2020, 12(3):341-348. DOI: 10.17725/rensit.2020.12.341.
Full-text electronic version of this article - web site http://en.rensit.ru/vypuski/article/348/12(3)341-348e.pdf