Vol. 12, no.3, 2020
РусскийEnglish
RADIOELECTRONICS
MODEL OF DEGRADATION OF INGAN/GAN LED DURING CURRENT TESTS TAKING INTO ACCOUNT THE INHOMOGENEOUS DISTRIBUTION OF TEMPERATURE AND CURRENT DENSITY IN THE HETEROSTRUCTURE
Vyacheslav A. Sergeev, Alexander M. Hodakov, Ilya V. Frolov
Kotelnikov Institute of Radioengineering and Electronics of RAS, Ulyanovsk Branch, http://ulireran.ru/
Ulyanovsk 432071, Russian Federation
E-mail: sva@ulstu.ru, ln23al@yandex.ru, ilya-frolov88@mail.ru
Received June 08, 2020; peer reviewed June 22, 2020; accepted June 30, 2020
Abstract. A diffusion kinetic model of the optical power degradation of an LED based on a double InGaN/GaN heterostructure during direct current tests is presented. According to the model, the main process causing a decrease in the optical power of the LED is the diffusion of Mg impurity atoms from the p-layer barrier of the heterostructure into the active region. The model takes into account the effect of non-uniform current distribution due to non-uniform heating of the chip by high-density current and can be used to predict the lifetime of the LED when operating in continuous and pulsed mode.
Keywords: LED, tests, decrease of emission power, model
UDC 621.382
RENSIT, 2020, 12(3):329-334. DOI: 10.17725/rensit.2020.12.329.
Full-text electronic version of this article - web site http://en.rensit.ru/vypuski/article/348/12(3)329-334e.pdf