Vol. 12, no.2, 2020


Photocurrent Domain Instability In High-Resistance Tunnel CdZnTe-Based Mis Structures

Yuri N. Perepelitsyn

Kotelnikov Institute of Radioengineering and Electronics of RAS, Saratov Branch, http://www.cplire.ru/rus/sfire
Saratov 410019, Russian Federation
E-mail: olga-optics@yandex.ru

Received November 21, 2019; peer reviewed December 15, 2019; accepted December 20, 2019
Abstract. The results of experimental studies of the photocurrent domain instability arising under illumination in high-resistance tunnel MTISTIM structures based on CdZnTe single crystals are presented. It is shown that the photocurrent domain instability is based on drift nonlinearity, i.e., the photostimulated spatial rearrangement of the electric field. It was found that, as in the classical Gunn diodes, the appearance of microwave oscillations of the photocurrent occurs at threshold values of external macro parameters, the change of which within certain limits provides a reversible change in the frequency of the oscillations up to 8 octaves. The results of experimental studies of the velocity–field dependence in CdZnTe, measured under spatially inhomogeneous distribution of the electric field in the volume of the MTISTIM structure, are presented. The threshold field of the oscillation occurrence and the maximum velocity of the majority carriers in CdZnTe single crystals are determined. Numerical estimates of the minimum irradiation power and carrier concentration necessary for the appearance of the photocurrent domain in the high-resistance MTISTIM structure of CdZnTe are presented. It is shown that due to the transverse electro-optical Pocckels effect, the change in the domain field of the electro-optical characteristics of the semiconductor component of the diode allows the transfer of optical information from the controlling light flux I1(x,t) to the probe light flux I2(x, t), transmitted through the structure, i.e., to carry out high-frequency optical modulation of one light flux by another.

Keywords:photocurrent domain instability, photocurrent oscillations, threshold field, high-resistance tunnel MTISTIM structure, photoelectric domain, electric current distribution

UDC 621.382.2; 537.222.22

RENSIT, 2020, 12(2):191-200. DOI: 10.17725/rensit.2020.12.191.

Full-text electronic version of this article - web site http://en.rensit.ru/vypuski/article/332/12(2)191-200e.pdf