Vol. 10, no.3, 2018
РусскийEnglish
SPINTRONICS
PROBLEMS OF CREATING MATERIALS AND FILM STRUCTURES BASED ON FERRITS FOR SPINTRONICS DEVICES
Valery A. Ketsko, Maria N. Smirnova, Maria A. Kopieva, Evgeny N. Beresnev
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, http://igic.ras.ru
Moscow 119991, Russian Federation
Received 01 November 2018
Abstract. The review presents the main directions of the search for materials and film structures based on them for spintronics devices, provides data on materials for these purposes available in the literature. The problems that need to be solved when creating spintronics structures are analyzed. A new method for the synthesis of ferrite films on semiconductor substrates without elastic stresses and unwanted interactions of components at the interface is presented. A method for the synthesis of powdered ferrites, based on burning the gel, characterized by phase homogeneity and dimensional unimodality, which makes it possible to use the material as a target for the synthesis of films, is considered. The prospects for the practical use of submicron films of ferrite garnets with a SiO2 buffer layer on Si with a Hilbert damping parameter α ≈ 10-3, which can be used in spin-wave device structures on silicon substrates, are considered.
Keywords: spintronics, ferrites, homogeneous powders, new method for creating film structures, properties of structures
UDC 546.027
RENSIT, 2018, 10(3):381-394 DOI: 10.17725/rensit.2018.10.381
Full-text electronic version of this article - web site http://en.rensit.ru/vypuski/article/260/10(3)381-394e.pdf