Vol. 10, no.3, 2018
РусскийEnglish
SPINTRONICS
INFLUENCE OF THE MAGNITUDE AND DIRECTION OF DC-INJECTION CURRENT ON SPIN ACCUMULATION AND THERMOEMF IN NiCo-InSb-NiCo LATERAL SPIN VALVE
Yuriy V. Nikulin, Mikhail E. Seleznev, Alexander G. Veselov, Yuriy A. Filimonov
Kotelnikov Institute of Radioengineering and Electronics of RAS, Saratov Branch, http://www.cplire.ru/rus/sfire
Saratov 410019, Russian Federation
Received 12 November 2018
Abstract. The influence of the direction and magnitude of the dc-injection current I (5µA-2 mA) on the spin accumulation Us and the thermo electromotive force Ue in the NiCo-InSb-NiCo lateral spin-valve structure based on textured n-InSb(111) film with thickness d ≈ 500 nm and an electron mobility µH ≈ 2.1 m2/V·s were studied. For non-local injection and detection geometry at T ≈ 300 K it was found that at injection current I less than critical Ic, the value of which is determined by the geometry of the structure, the detected voltage Uac = Us + Ue increases linearly with I from units to a few hundred microvolts and differs in sign for direct and reverse directions of injection current (|I| < Ic is the region of spin accumulation, Uac ≈ Us). At injection currents |I| > Ic, a sharp increase of the detected voltage to a few units or tens of millivolts is observed, and the sign of the detected voltage is positive for both directions of the injection current (at |I| > Ic dominates the thermoe-lectric effect, Uac ≈ Ue, Us << Ue).
Keywords: lateral spin valve, semiconductors indium-antimonide, ferromagnetic metals, spin transport
PACS: 72.25.-b, 73.40.-c
RENSIT, 2018, 10(3):373-380 DOI: 10.17725/rensit.2018.10.373
Full-text electronic version of this article - web site http://en.rensit.ru/vypuski/article/260/10(3)373-380e.pdf