Vol. 10, no.3, 2018
РусскийEnglish
SPINTRONICS
SPINTRONICS: PHYSICAL FOUNDATIONS AND DEVICES
Yuri K. Fetisov, Alexander S. Sigov
MIREA-Russian Technological University, https://www.mirea.ru
Moscow 119454, Russian Federationn
Received 19 March 2018
Abstract. "Spintronics" is one of the most rapidly developing branches of science and technology, which is currently considered as the most promising technology for the further development of the elemental base for information technology. Spintronics includes physical effects caused by the spins of individual electrons and spin-polarized currents flowing in thin magnetic and semiconductor films and heterostructures, and information processing devices based on them. The review provides qualitative estimates demonstrating potential advantages of spintronics in comparison with semiconductor micro- and nanoelectronics. Physical phenomena that form the scientific basis of spintronics, such as domain microstructures, skyrmions, spin waves, spin-polarized current, giant and tunnel magnetoresistance, spin transfer of angular momentum are considered. Prospective spintronics materials, including ferromagnetic metals and semiconductors, semimetal ferromagnetic oxides, Heusler alloys are listed. The possibilities of controlling spin currents using magnetic fields, mechanical deformations in multiferroic structures, and ultrashort optical pulses are shown. The spintronic devices that are under development or already made are described, such as high-sensitivity magnetic field sensors, random access magnetic memory elements, ultra-high frequency nanogenerators, spin diodes and spin transistors, and a spin holographic processor. The final part lists the main research centers for spintronics abroad and in Russia, and provides a list of overview publications on the topic.
Keywords: spintronics, magnetic heterostructures, spin-polarized current, spin waves, skyrmion, magnetoresistance, tunnel effect, magnetic field sensors, spin transistor, spin generator, spin processor
PACS: 67.57.Lm, 72.25.Ba, 75.70.-i, 75.76.+j
RENSIT, 2018, 10(3):343-356 DOI: 10.17725/rensit.2018.10.343
Full-text electronic version of this article - web site http://en.rensit.ru/vypuski/article/260/10(3)343-356e.pdf