Vol. 10, no.1, 2018
РусскийEnglish

NANOSTRUCTURES FOR INFORMATION TECHNOLOGIES



MODELING OF CURRENT TRANSFER IN ALAS/GAAS HETEROSTRUCTURES WITH ACCOUNTING FOR INTERVALLEY SCATTERING
Nataly A. Vetrova, Yuri A. Ivanov, Evgeny V. Kuimov, Mstislav O. Makeev, Sergey A. Meshkov, Kirill P. Pchelintsev, Vasily D. Shashurin
Bauman Moscow State Technical University, http://www.bmstu.ru
Moscow 105005, Russian Federation
vetrova@bmstu.ru, y-a-ivanov@mail.ru, ekjmo@mail.ru, mc.stiv@gmail.com, sb67241@mail.ru, pkp@bmstu.ru, schashurin@bmstu.ru

Received 18.05.2018
Abstract. When modeling devices based on AlAs/GaAs heterostructures, an important factor to consider is intervalley electron scattering at heterointerfaces. This paper shows an approach to modeling such processes using the Schrödinger equations for the open reservoir-channel-reservoir system. The problem of modeling the intervalley scattering of electrons in the case when the profile of the aluminum fraction is continuous when there are no pronounced heterointerfaces is considered. For the numerical solution of the equations obtained, the method of finite differences is used without reducing the accuracy of the difference scheme to the first order when boundary conditions are considered. The methods of composing the elements of the matrices of system of linear equations to reduce the temporal complexity of the algorithm are considered. Based on the results of the calculation in the two-valley approximation, in comparison with single-valley calculations, it was concluded that this model can be used to calculate the current-voltage characteristics of AlAs/GaAs heterostructures, taking into account the manufacturing technology and the patterns of degradation during operation, and also in evaluating the reliability parameters of nanoelectronics devices.

Keywords: heterostructures, nanoelectronic, math modeling, electrons intervalley scattering, two-valley approximation

UDC 004.052, 538.91

RENSIT, 2018, 10(1):71-76 DOI: 10.17725/rensit.2018.10.071

Full-text electronic version of this article - web site http://en.rensit.ru/vypuski/article/243/10(1)71-76e.pdf