Vol. 7, №2, 2015


Nadezhda G. Bobenko, Alexander N. Ponomarev, Alexander A. Reshetnyak

Institute of Strength Physics and Materials Science, Siberian Branch of Russian Academy of Sciences, http://www.ispms.ru/
634021 Tomsk, Russian Federation
nlitvin86@rambler.ru, alex@ispms.tsc.ru, reshet@ispms.tsc.ru

Received 15.10.2015
Abstract. We consider two approaches to find both the longitudinal and Hall conductivities of AB-stacked bilayer graphene in dependence of frequency, finite chemical potential, temperature with magnetic field on a base of 2- and 4-band effective models. The relations to be important for optoelectronic among Hall conductivities and Faraday, Kerr angles in the AB-bilayers samples in the electric and magnetic fields when the radiation passes across bilayer sheets on different kinds of substrate are derived. We obtain the low-temperature electrical resistivity (conductivity) of the epitaxial graphene on a base of the temperature electron Green functions method adopted for carbon nanosystems from metallic system. The calculations of contribution to the conductivity (in addition to Drude part) is realized with account for multiple elastic scattering of electrons by impurities and structural inhomogeneities of short-range order.

Keywords: graphene, band effective model, conductivity, temperature electron Green functions method, elastic scattering of electrons, structural inhomogeneities

PACS: 68.65.Pq, 72.80.Vp, 75.47.-m, 73.43.-f, 72.40.+w

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RENSIT, 2015, 7(2):168-174 DOI: 10.17725/rensit.2015.07.168
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