Vol. 7, №2, 2015

NANOSYSTEMS

STUDY OF ELECTRICAL CONDUCTIVITY OF THERMALLY REDUCED GRAPHENE OXIDE
Efim P. Neustroev, Mariya V. Nogovitsyna, Yuliya S. Solovyova, Grigory N. Alexandrov, Еvgokiya К. Burtseva
North-Eastern Federal University named after M.K. Ammosov, http://www.s-vfu.ru
677000 Yakutsk, Russian Federation
ep.neustroev@s-vfu.ru

Received 07.09.2015

Abstract. Graphene oxide under study was obtained by a modified Hummers method. Samples were subjected to thermal reduction in a temperature range from 200° to 300°C in an atmosphere of argon and in vacuum. Results of measurements of volt-ampere characteristics of the samples in a temperature range from 80 to 300 K showed the presence of linear dependence of logarithm of current on a reciprocal temperature above 160-180 K. At temperatures below these values a power dependence of current on the temperature is observed. In this paper an assumption is made that both a Mott variable-range hopping (VRH) and the Efros-Shklovskii (ES-) VRH mechanism affect the electrical conductivity of graphene oxide in the range from 10 to 180 K. A contribution of each mechanism depends on conditions of carrying out the thermal reduction.

Keywords: materials for nanoelectronics, graphene oxide, thermal reduction, current-voltage curves, temperature dependence of resistance, mechanism of electrical conductivity, thermal activation mechanism, mechanism of the variable-range hopping

PACS: 53.039

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RENSIT, 2015, 7(2):162-167 DOI: 10.17725/rensit.2015.07.162

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