Vol. 8, №1, 2016
РусскийEnglish
EUGENE S. SOLDATOV, (03.05.1951, Dnepropetrovsk, USSR)
Ph.D. Phys&Math., Corresponding Member of the Russian Academy of Natural Sciences, http://www.raen.info, (2001)

Address: 1/2, Leninskie Gory, Moscow, 119991 Russia
E-mail: esold@phys.msu.ru

Education and Degrees
Ph.D. Phys&Math., Lomonosov Moscow State University, Faculty of Physics (1983)
Diploma: Lomonosov Moscow State University, Faculty of Physics, Chair of Oscillation Physics (1974)

Academic Title: -

Affiliation history
Lomonosov Moscow State University, Faculty of Physics, http://www.phys.msu.ru (1974 – at present)

Research Interests
Radio physics, micro and nanoelectronics, molecular nanoelectronic structures, correlated electron tunneling (single-electronics)

Academic Councils and Research Management
Lomonosov Moscow State University, Faculty of Physics, Chair of Atomic Physics, Plasma Physics and Microelectronics, (1974-2015), Chair of Semiconductors, (2015 – present)
Cryoelectronics Laboratory, a scientific group of molecular single-electronics, Head (1990)

Editorial Boards
Scientific journal “RENSIT: Radioelektronika. Nanosistemy. Informatsionnye Tekhnologii” ISSN 2218-3000 - editorial board member (2009)

Selected Publications
Papers:
E.S. Soldatov, V.V. Khanin, A.S. Trifonov, S.P. Gubin, V.V. Kolesov, D.E. Presnov, S.A. Iakovenko, G.B. Khomutov. Room temperature single-electron transistor on the base of single cluster molecule. JETP Lett., 1996, 64(7):556.
V.V. Shorokhov, P. Johansson, E.S. Soldatov, Simulation of Characteristics of Molecular Set Transistor with Discrete Energy Spectrum of the Central Electrode. J. Appl. Phys., 2002, 91:3049.
S.P. Gubin, Yu.V. Gulyaev, G.B. Khomutov, V.V. Kislov, V.V. Kolesov, E.S. Soldatov, K.S. Sulaimankulov, A.S. Trifonov. Molecular Clusters As Building Blocks For Nanoelectronics: The First Demonstration of A Cluster Single-Electron Tunneling Transistor At Room Temperature. Nanotechnology, 2002, 13:185.
S.P. Gubin, V.V. Shorokhov, G.B. Khomutov, V.V. Kolesov, E.S. Soldatov, K.S. Sulaimankulov, A.S. Trifonov. Molecular Cluster Based Nanoelectronics. Microelectronic Engineering, 2003, 69:536.
V. V. Shorokhov, E. S. Soldatov, and S. P. Gubin. Self-Capacitance of Nanosized Objects. Journal of Communications Technology and Electronics, 2011, 56(3):326-341, doi: 10.1134/S1064226911030090. Impact-factor (JCR-2013): 0.359; indexed in Scopus and Web of Science (http://link.springer.com/article/10.1134/2FS1064226911030090). Translation of article: V. Shorokhov, E. Soldatov, S. Gubin. Sobstvennaya emkost’ nanorazmernykh ob’ektov. Radiotekhnika i elektronika, 2011, 56(3):352–369 (in Russ.).
Ya. S. Gerasimov, V. V. Shorokhov, A. G. Maresov, E. S. Soldatov, O. V. Snigirev, Calculation of the mutual capacitance of nanoobjects. Journal of Communications Technology and Electronics, 2011, 1056(12):1483-1489, doi: 10.1134/S106422691111009X. Impact-factor (JCR-2013): 0.359; indexed in Scopus and Web of Science (http://link.springer.com/article/10.1134/S106422691111009X). Translation of article: Ya. S. Gerasimov, V. V. Shorokhov, A. G. Maresov, E. S. Soldatov, O. V. Snigirev. Raschet vzaimnoy emkosti nanoob’ektov. Rdiotekhnika i elektronika, 2011, 56(12):1514–1521 (in Russ.).
A. Stepanov, E. Soldatov, and O. Snigirev. Implementation of molecular transistor electrodes by electromigration. Journal of Superconductivity and Novel Magnetism, 2011, 24(1-2):1087-1093, doi: 10.1007/s10948-010-0857-y. Impact-factor (JCR-2013): 0.930; indexed in Scopus and Web of Science (http://link.springer.com/article/10.1007%2Fs10948-010-0857-y).
Y. Gerasimov, V. Shorokhov, E. Soldatov, and O. Snigirev. Gold nanoparticle single-electron transistor simulation. Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 870015, 2013, doi: 10.1117/12.2017078. Indexed in Scopus (SJR-2013: 0,192) and Web of Science (http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1555696).
S. Dagesyan, A. Stepanov, E. Soldatov, and G. Zharik. High-temperature single-electron transistor based on a gold nanoparticle. Proc. of SPIE, the International Society for Optical Engineering, vol. 9440, pp. 94400P–1–94400P–6, 2014, doi: 10.1117/12.2181137. Indexed in Scopus (SJR-2013: 0,192) and Web of Science (http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=2086486).
Dagesyan S.A., Stepanov A.S., Soldatov E.S., Snigirev O.V., Properties of Extremely Narrow Gaps Between Electrodes of a Molecular Transistor. Journal of Superconductivity and Novel Magnetism, 2015, 28(3):787-790.

Awards and grants
RFBR, 06-05-64988-а. RFBR, № 12-07-00816а, RFBR, № 09-07-00272а, ISTC № 3457, ISTC № 1991, INTAS 99-00864.