VYACHESLAV A. SERGEEV
Kotelnikov Institute of Radioengineering and Electronics of RAS, Ulyanovsk Branch, http://ulireran.ru/
48/2, Goncharova str., Ulyanovsk 432071, Russian Federation
sva@ulstu.ru
Papers:
1. Vyacheslav A. Sergeev, Alexander M. Hodakov, Ilya V. Frolov. The model of degradation of InGaN/GaN LED during current tests taking into account the inhomogeneous distribution of temperature and current density in the heterostructure. RENSIT, 2020, 12(3):329-334. DOI: 10.17725/rensit.2020.12.329.
2. Alexander M. Hodakov, Ruslan G. Tarasov, Vyacheslav A. Sergeev, Alexander A. Kulikov. Thermal deformation model of the submodule of the X-band output power amplifier. RENSIT, 2021, 13(1):13-18. DOI: 10.17725/rensit.2021.13.013.
3. Vyacheslav A. Sergeev, Alexander M. Hodakov. Thermoelectric model of a heterojunction bipolar transistor taking into account the voltage drop on the current-carrying metallization. RENSIT, 2022, 14(2):103-110e. DOI: 10.17725/rensit.2022.14.103.
4. Vyacheslav A. Sergeev, Sergey V. Vasin, Mikhail S. Efimov.Flexible Humidity and Temperature Sensor Based on Film Structures of Polymer Nanocomposites with Carbon Nanotubes. RENSIT, 2023, 15(1):13-20e. DOI: 10.17725/rensit.2023.15.013.
5. Vyacheslav A. Sergeev, Alexander M. Khodakov. Dynamic thermoelectric model of a heterojunction bipolar transistor taking into account the voltage drop on the emitter metallization tracks. RENSIT, 2023, 15(2):109-116e. DOI: 10.17725/rensit.2023.15.109