Vol. 12, no. 3, 2020
РусскийEnglish
VYACHESLAV A. SERGEEV
Kotelnikov Institute of Radioengineering and Electronics of RAS, Ulyanovsk Branch, http://ulireran.ru/
48/2, Goncharova str., Ulyanovsk 432071, Russian Federation
sva@ulstu.ru
Papers:
Vyacheslav A. Sergeev, Alexander M. Hodakov, Ilya V. Frolov. The model of degradation of InGaN/GaN LED during current tests taking into account the inhomogeneous distribution of temperature and current density in the heterostructure. RENSIT, 2020, 12(3):329-334. DOI: 10.17725/rensit.2020.12.329.